MMBT2222LT1G TRANS NPN 30V 0.6A SOT23-3，SOT23-3 NPN silicon switching transistor, Vceo=30V, max collector Ic=0.6A, Vcbo=60V, Vebo=5V, saturation Vce(sat)=1.6V @Ib=50mA/Ic=500mA, DC gain hFE≥100 @Ic=150mA, max power dissipation 300mW, transition frequency ft=250MHz, working junction temp -55℃~150℃
MMBT2222LT1G TRANS NPN 30V 0.6A SOT23-3
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