Circuit configuration: Half‑bridge (2 IGBTs + 2 free‑wheeling diodes)
Technology: 2nd‑generation low‑loss IGBT, soft emitter‑controlled diode
Collector‑emitter voltage VCES: 1700 V
Nominal DC collector current Ic,nom (Tc=80 °C): 1200 A
Collector current Ic (Tc=25 °C): 1950 A
Repetitive peak collector current ICRM (tp=1 ms): 2400 A
FZ1200R17KF6B2
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