Vces emitter withstand voltage 1700 VTvj=25 ℃ Ic continuous DC current 2400 ATc=80 ℃ Ic (25 ℃) 3200 ATc=25 ℃ Icrm repetitive peak current 4800 Atp=1ms Vges gate emitter voltage ± 20 VPtot maximum power consumption 12500 WTc=25 ℃ Tvj operating junction temperature -40~+150 ℃ Tstg storage temperature -40~+125 ℃
Single tube IGBT power module，FZ2400R17KE3-B9-S1
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$363.43
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Located in:Xi'an City China
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