Collector-Emitter repetitive voltage VCES: 1200 V
Continuous rated collector current IC: 200 A (Tc=80℃)
Peak non-repetitive surge current (10ms): 400 A
Gate-Emitter drive voltage VGES: ±20 V (standard drive +15V/-8V)
Max single chip power dissipation Pc: 1160 W
Saturation voltage VCE(sat): Max 3.4 V @ 200A, Tj=25℃
Built-in brake chopper: Independent single IGBT for DC bus overvoltage energy bleeder
